100W Lte 2600MHz Ldmos High Efficiency RF Power Amplifier for Jammer

• Usage: Workstation, Server, Telecommunication
• Type: Signal Amplifier
• Support Network: Lte
• Information content: Data
• Condition: New
• Frequency: 2620-2690MHz
• Model NO.: HPA-G50(2620-2690MHz)
• Output Power: 120W (50.8dBm)
• Gain: 45dB or Customized
• Transport Package: Carton
• Specification: 210*110*25mm
• Trademark: OEM
• Origin: Shenzhen, China
• HS Code: 8517709000
• Production Capacity: 600units/Month

Product Description

PRODUCT DESCRIPTION:

This Power Amplifier module is working for General RF Bands,With aluminum case and cooper base, it need operating on heatsink.

Output power can be suit in this design from 43dBm to 50dBm with more than 25% efficiency, and it can keep stable working over -20~65ºC. PA are equiped with over-high VSWR and over-high power protection to avoid/reduce the damage from any misoperation. I/O Port is compatible with DB15 serial port and RS485 (Optional).

More function and parameters are avaiable to customized according to actual requirement.

Main Specification:

Item		Specification
Frequency Range		2620-2690MHz
Input Signal Level		3-8dBm
Max RF Output Power		50dBm
Gain		46±1 dB
Gain Adjustble  Range		31dB
In-Band Ripple		2dB
In/Out VSWR		1.3
Working Voltage		27VDC
Working Current		Less than 11Amps
Size&Weight		210mm*110mm*24mm / 1.3KG
RF Power Connector		SMA-Female
Power Supply Connector		Pull-core Capacitance
Monitoring Content  via RS232 (DB15)		PIN1: 1dB Attenuation
		PIN2: 2dB Attenuation
		PIN3: 4dB Attenuation
		PIN4: 8dB Attenuation
		PIN5: 16dB Attenuation
		Pin7:   VSWR(Reflected RF Power, Max voltage: 4.5V; 0.05V/dBm)
		Pin10:  Output RF Power ( Max voltage: 4.5V; 0.05V/dBm)
		Pin14:   Temperature:  0.35V/10 Celsius; 1.5V/40 Celesius;  1.9V /Shutdown
		Pin11: Enable, High level:Off; Low Level: On
		Pin15: GND
		Pin6, Pin8, Pin9, Pin12, Pin13:  NC